High-κ lutetium oxide and lutetium titanium oxide of amorphous indium-gallium-zinc-oxide for flexible thin film transistors applications
碩士 === 長庚大學 === 光電工程研究所 === 99 === In this work, we used TaN as the gate electrode, utilize high κ value material lutetium oxide to form the gate dielectric of the amorphous indium-gallium-zinc-oxide for thin film transistors by sputter system, and then deposited the active layer of α-IGZO, used of...
| Main Authors: | , |
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30345787867614511569 |