Metal/SiO2/Y2O3/SiO2/Si TFTs Memory Device Using High-k Y2O3 Charge Trapping Layer deposited by E-gun
碩士 === 長庚大學 === 光電工程研究所 === 99 === In this thesis, we use physical vapor E-gun method deposited high-k dielectric for nanocrystals trapping layer. A 10-nm direct tunneling oxide was deposited using an electron gun system by yttrium oxide (99.9% pure) powder. After various temperature RTA 600,700,800...
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56246886247119819440 |