| Summary: | 碩士 === 長庚大學 === 光電工程研究所 === 99 === In this study, we used X-ray photoelectron spectroscopy (XPS) to analyze ultra-shallow junctions (USJs).
The USJ samples were activated by laser annealing. Than deactivation annealing was performed. The XPS signal for phosphorus increased after deactivation annealing. Angle resolved XPS (ARXPS) was performed to obtain the concentration near the surface. The result was compared with profile obtain by secondary ion mass spectroscopy (SIMS).
Differential Hall measurement (DHE) was carried out to obtain active phosphorus profile. For DHE, the thickness of native oxide influences the depth resolution. Silicon on insulator (SOI) specimens with uniform doping profiles were used to investigate the growth rate of native oxide. After stripping the initial oxide, SOI samples were exposed to the air for different times. Synchrotron radiation XPS was used to measure the oxide thickness to realize the growth of native oxide with high concentration phosphorus. After that, the silicon near the surface was removed by stripping native oxide. The thickness of native oxide was monitored by XPS. The concentrations of activate phosphorus in different depth were measured by Hall measurement.
With XPS measurement, the chemical and active phosphorus profile of USJs can be analyzed simultaneously.
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