The Characteristics and Limitations of 65 nm node RF MOSFETs
碩士 === 長庚大學 === 電子工程學系 === 99 === The continued evolution of process technologies has resulted in the downscaling of the device dimension. The device characteristics of Si RF MOSFETs in the high frequency regime such as RF gain, cut-off frequency (fT), and minimum noise figure (NFmin) are improved a...
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21048995493912933556 |