The effect of junction temperature on the optoelectrical properties of InGaN/GaN multiple quantum well light-emitting diodes
碩士 === 長庚大學 === 電子工程學系 === 99 === Thermal effects on the optoelectrical characteristics of green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) have been investigated in detail for a broad temperature range, from 30 C to 100 C.The current-dependent electroluminescence (EL) spec...
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59490833073094035706 |