| Summary: | 碩士 === 長庚大學 === 電子工程學系 === 99 === With continued technology scaling, emerging three-dimensional (3D) integration technologies and System-in-Package (SiP) are the better solutions for miniaturization of systemized semiconductor devices than System-on-Chip(SoC). The 3D stacking is the predominant for SiPs. Thus, the substrate transfer to develop the ultra-thin chip technology for semiconductor chip on flexible substrate is the key topics. Microelectronics on flexible substrates is great interest for applications that require low weight, robust integrated circuits, and mechanically flexible substrates. Thus, flexible electronics are pervading our life due to the low cost, lightness, thinness, shortness and minimization properties.
This paper reports the successful substrate transfer based on standard IC processing to an alternative substrate e.g. plastic. The device on thin-down substrate by using DBG (dicing before grinding) and thermo-compression bonding process is proposed. Acceptable electrical performances are achieved means that the process can be controlled well. After that, due to the high flexibility of the thin body thickness and plastic substrate, a large external mechanical stress would be applied for more device performance improvement. The experimental procedure will be briefly presented like apparatus installation and ANSYS 10.0, with background concept and operation instructions, respectively. Under the mechanical strain, the longitudinal strain provides greater enhancement than transverse strain for nMOSFETs. The increment rate of Id,sat is decrease and saturation while the gate length in sub-micro region but the width effect is not clear. Good reliability is obtained after dynamic, static bending strain and HCS under 7.5 mm radius of curvature bending vehicle. We will summarize all our viewpoints and conclusion, based on measured and simulated data in the final part.
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