High-k Er2O3 gate dielectric of amorphous-InGaZnO TFTs applications
碩士 === 長庚大學 === 電子工程學系 === 99 === In this work, we used TaN as gate electrode. The α-IGZO thin film transistors with Er2O3 gate dielectric were deposited by sputter system, and the α-IGZO as active layer. Finally, the aluminum as source and drain were deposited by thermal evaporator. The advantages...
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28281637422770822774 |