The Study of Ti-Doped Gd2O3 Dielectric as Sensing
碩士 === 長庚大學 === 電子工程學系 === 99 === Various high dielectric constant (high-k) materials replacing the gate SiO2 oxide layer have been widely investigated owing to their high dielectric constant and large conduction band offset. In this work, the comparison between the high-k Gd2O3 and Ti-doped Gd2O3...
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87616001215410314626 |