The Ti-doped Tb2O3 Dielectric with Fluorine Implantation on
碩士 === 長庚大學 === 電子工程學系 === 99 === In this thesis, the comparison between the high-k Tb2O3 and the addition of Ti into the Tb2O3 (Ti doped Tb2O3) dielectrics by reactive radio frequency (RF) sputtering were investigated. The electrical and material analysis techniques were exploited to characterize t...
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61397109822316771562 |