The Ti-doped Tb2O3 Dielectric with Fluorine Implantation on

• Main Authors: Shih Nan Cheng, 鄭詩男
• Other Authors: C. H. Kao
• Format: Others
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/61397109822316771562

碩士 === 長庚大學 === 電子工程學系 === 99 === In this thesis, the comparison between the high-k Tb2O3 and the addition of Ti into the Tb2O3 (Ti doped Tb2O3) dielectrics by reactive radio frequency (RF) sputtering were investigated. The electrical and material analysis techniques were exploited to characterize the dielectric performance so that we can find the optimal condition to fabricate high-k inter-dielectrics with superior dielectric strength and lower gate leakage current for future nonvolatile memory and TFT’s applications. On the other hand, the influence of fluorine implantation treatment of various dosages with rapid thermal annealing on the Ti-doped (Tb2TiO5) dielectrics deposited on polycrystalline silicon has been investigated using electrical and material analyses. It can be found that the Tb2TiO5 dielectric annealed at 800 0C combined with optimum fluorine implantation pre-treatment (1x1015cm-2) on polysilicon exhibited excellent dielectric performance, including higher breakdown electric field, lower charge trapping rate, larger charge-to-breakdown. According to the result, the fluorine ions can pile up distributed at the interfaces between the high-k and poly-Si to form stronger Si-F bonds after proper annealing (8000C). Therefore, the performance and reliability improvements of the Tb2TiO5 dielectrics were caused by the proper incorporation of the fluorine atoms and the reduction of the dangling bonds and defect traps and charge trapping.