A Watt Level HBT Power Amplifier and Dual-Band pHEMT Low Noise Amplifier Using GaAs Technology
碩士 === 長庚大學 === 電子工程學系 === 99 === In this thesis, a watt-level power amplifier and a dual-band low noise amplifier using WIN Semiconductors GaAs foundry service were developed. This thesis was separated by two parts. In the first part, watt- level power amplifier was design by using 2 μm HBT technol...
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| Format: | Others |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39744796639693017981 |