Gate-First TaN/La2O3/SiO2/Ge n-MOSFETs Using Laser Annealing
碩士 === 中華大學 === 電機工程學系碩士班 === 99 === The small bandgap (EG) Ge shows high potential for MOSFET application due to both higher electron and hole mobility than Si. However, the difficult challenges are the high leakage current of small EG, poor high- k/Ge interface property, and low doping activation...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13662514242250053351 |