Iridium Nanocrystal Assisted Thin Film Transistor Nonvolatile Memory with Asymmetric Tunnel Barrier
碩士 === 中華大學 === 電機工程學系碩士班 === 99 === Since Sze et al invented the first floating-gate nonvolatile memory (NVM) at Bell Lab in 1967, various kinds of nonvolatile memories and the process technologies have been rapidly proposed and progressed over the past 40 years. In recent years, the scaling of t...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15164010668256930611 |