The Fabrication and Electrical Properties of HfZrO2 n-MOSFETs
碩士 === 中華大學 === 電機工程學系碩士班 === 99 === With the scaling down of the metal-oxide-semiconductor field-effect transistor device, traditional SiO2 gate dielectric will fail to overcome the influence brought on by the quantum mechanical tunneling effect. The high dielectric constant materials for the next...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08353082425016372853 |