| Summary: | 碩士 === 中華大學 === 電機工程學系碩士班 === 99 === With the scaling down of the metal-oxide-semiconductor field-effect transistor device, traditional SiO2 gate dielectric will fail to overcome the influence brought on by the quantum mechanical tunneling effect. The high dielectric constant materials for the next generation complementary metal-oxide-semiconductor transistor devices have attracted SiO2.Hafnium-based dielectrics have been extensively investigated as a possible replacement for SiO2. Hafnium oxide exhibits good thermodynamic stability on direct contact with Si , high dielectric constants, a large band offset with Si, suffers from mobility degradation, fixed charge and threshold voltage instability, etc.. The properties of HfO2 can be improved by adding different elements such as Si, Al, N, Ti ,Ta. It is reported that zirconium oxide (ZrO2) has similar chemical structure to that of HfO2 and is completely miscible in HfO2. HfZrO2 gate dielectric showed: higher trans-conductance. less charge trapping, higher drive current, lower NMOS Vt, reduced C-V hysteresis, lower interface state density, superior wafer-level thickness uniformity, and longer PBTI lifetime.
In this paper, with HfZrO2 different gate dielectric layer to produce capacitors anannealed at different temperatures measuring the capacitance-voltage characteristics; also successfully fabricated n-type field effect transistors, and measurements the basic electrical components .
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