The Investigation and Application of High-κ Dielectric HfZrOx and Metal Gate P-MOSFET Technology
碩士 === 中華大學 === 電機工程學系碩士班 === 99 === With the rapid development in recent years, semiconductor devices MOS transistor scaling down due to device size ratio of both miniature and follow the specifications, so the gate oxide thickness will inevitably have to reduce as the channel size and relatively n...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00126277303607847109 |