Characterization of Switching in ZrOx /HfOx Bi-layer RRAM Devices

碩士 === 中華大學 === 電機工程學系碩士班 === 99 === Well progressive elaboration of infrastructure plus highly commercial progress of potable electrical product leading the tremendous market growth of nonvolatile memory market. In nearly years, conventional Flash is approaching very difficult issues related their...

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Bibliographic Details
Main Authors: Yueh-Po Lu, 盧岳伯
Other Authors: C.H.Wu
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/88655115523819006448