Characterization of Switching in ZrOx /HfOx Bi-layer RRAM Devices
碩士 === 中華大學 === 電機工程學系碩士班 === 99 === Well progressive elaboration of infrastructure plus highly commercial progress of potable electrical product leading the tremendous market growth of nonvolatile memory market. In nearly years, conventional Flash is approaching very difficult issues related their...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88655115523819006448 |
| Summary: | 碩士 === 中華大學 === 電機工程學系碩士班 === 99 === Well progressive elaboration of infrastructure plus highly commercial progress of potable electrical product leading the tremendous market growth of nonvolatile memory market. In nearly years, conventional Flash is approaching very difficult issues related their continued scaling down because of its intrinsic storage mechanism. And it is essential to find out next generation NVM device.
In this paper, we success demonstrate resistive switching behavior of ZrOx/HfOx bi-layer insulator in MIM structured memory device, those materials are extensively adopted in High-K CMOS process, and each material has various reaches in RRAM field.
We also perform ZrOx /HfOx bi-layer annealing cause to lower operation condition and also identify the mechanism of which device can be explained by SCLC theory using double-logarithmic plot fitting to experiment result.
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