A Study of Microcrystalline Silicon Thin Film Deposited By ECR-CVD

• Main Authors: Lin Wun Bin, 林文彬
• Other Authors: Huang Sheng Bin
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/82898577295834411665

碩士 === 建國科技大學 === 電機工程系暨研究所 === 99 === Microcrystalline silicon (uc-Si) thin films have been prepared by electron cyclotron resonance chemical vapor deposition (ECR CVD) system. The uc-Si deposited by ECR with different concentration SiH4 (SiH4/SiH4+ H2), deposition pressures, microwave powers, and RF bins powers were investingated. The film thickness, crystalline fraction, crystalline orientation and grain size, and energy band gap of uc-Si films were measured and analysed by α-step, Raman Spectrometer, X-ray diffraction, and UV-visible Spectroscopy, respectively. The experimental results show that, When SiH4 concentration (SiH4/SiH4+ H2) is 3%, deposition pressure is 10 mTorr, Microwave power is 700W, and RF power is 15W we have high crystalline fraction.