NiSi and NiSiGe with Yb Silicide Segregation Layer for Advanced Schottky Barrier Device
碩士 === 清雲科技大學 === 電機工程所 === 99 === Metal silicide technology has been widely employed in semiconductor industry. The advantages of metal silicide technology are self-alignment system and low resistivity characteristics. In this thesis, we use metal silicide to modulate the Schottky barrier height. 1...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65769769718052733922 |