NiSi and NiSiGe with Yb Silicide Segregation Layer for Advanced Schottky Barrier Device

• Main Authors: Jr-Jie Tsai, 蔡智傑
• Other Authors: Yu-Jane Mei
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/65769769718052733922

碩士 === 清雲科技大學 === 電機工程所 === 99 === Metal silicide technology has been widely employed in semiconductor industry. The advantages of metal silicide technology are self-alignment system and low resistivity characteristics. In this thesis, we use metal silicide to modulate the Schottky barrier height. 100nm SiGe was deposited on silicon substrate because of its high mobility. After LOCOS process, the rare earth(RE) metals (Yb) and metals (nickel) were stacked , precipitated and formed Schottky junction using rapid thermal annealing between 400 ℃ and 900 ℃. Ion implantation was used to inhibit the hole formation when metal silicide was produced. In this study, four-point probe was used to measure sheet resistance. XRD, AES, TEM and electrical analysis were used to investigate the device characteristics. It was found that ytterbium silicide and silicon-germanium annealing at 700 ℃ have low sheet resistance and the Schottky barrier height. This result which may be cause by rare earth oxide does not match with the literature. It is necessary to be improved in the future.