NiSi and NiSiGe with Yb Silicide Segregation Layer for Advanced Schottky Barrier Device
碩士 === 清雲科技大學 === 電機工程所 === 99 === Metal silicide technology has been widely employed in semiconductor industry. The advantages of metal silicide technology are self-alignment system and low resistivity characteristics. In this thesis, we use metal silicide to modulate the Schottky barrier height. 1...
Main Authors: | Jr-Jie Tsai, 蔡智傑 |
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Other Authors: | Yu-Jane Mei |
Format: | Others |
Language: | zh-TW |
Published: |
2011
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Online Access: | http://ndltd.ncl.edu.tw/handle/65769769718052733922 |
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