The study of Opto-Electronic Charactrtistics for Transparent Semiconductor Thin Film Grown by RTCVD

• Main Authors: Wu,Chang-ren, 吳昌任
• Other Authors: 范榮權
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/63721232522240539805

碩士 === 大葉大學 === 電機工程學系 === 99 === We investigated the ZnO thin film which were deposited on corning glass substrates at different chamber temperature by Rapid-Thermal chemical vapor Deposition (RTCVD). The chamber pressure was set at 1.5Torr. The crystal structure and surface morphologies of ZnO thin films were analyzed by XRD, AFM and FESEM. In the optical measurement, the ultra violet region have strong absorption. As a result, we achieve a lowest resistivity with value of 0.1Ω cm, The average optical transmittance within the visible spectra is more than 75%. The optimum conditions for the growth of 350oC. For the thermally stimulated current measurement, the activation energy of the ZnO thin film is suggested that the exciton binding energy dominates the thermal activation process.