Exploration of Characteristics in the Thin Films of Zirconium Oxide Prepared by Anodic Oxidation Method
碩士 === 大葉大學 === 電機工程學系 === 99 === It has been years that in semiconductor integrated circuit manufacturing, people have successfully used SiO2 as gate dielectric material in MOSFET and other related device. Recently, due to the improvement of semiconductor technique, the size of device has been re...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50618669844719020841 |