Investigations on Light Extraction Efficiency of GaN-Based Light-Emitting Diodes
碩士 === 逢甲大學 === 資訊電機工程碩士在職專班 === 99 === This article researches the use of GaN epitaxial layer and the sapphire substrate to form the outer and inner chamfer of the morphology with the following two primary methodologies: First, coat barrier layer (SiO2) on flat substrates, define the type of SiO2 d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77572402740740419283 |