Investigation of AlGaAs/InGaAs pseudomorphicHigh Electron Mobility Transistors With MOS-gate Structure and Oxide Passivation by Using Ozone Water Oxidation Technique
碩士 === 逢甲大學 === 電子工程所 === 99 === AlGaAs/InGaAs high electron mobility transistors (HEMTs) using ozone water treatment. As a surface passivation layer and metal-oxide-semiconductor HEMTs (MOS-HEMTs) using ozone water as gate oxide have been investigated and compared with the conventional HEMTs. In M...
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73793691392240419715 |