Process Development and Characteristics of ZnO Resistive RAM and Its Application on Glass Substrate
碩士 === 逢甲大學 === 電子工程所 === 99 === When memory device dimension continues to scale down, the traditional charge-based memory will suffer the data access problem due to the little charge can be controled, such as dynamic random access memory (DRAM) or flash memory. Thus, many novel memory technologies...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/98330335698945984387 |