Liquid Phase Oxidized GaAs as Gate Insulator for Enhancement-Mode InGaP/InGaAs Metal-Oxide-Semiconductor Pseudomorphic High-Electron-Mobility Transistor Applications
碩士 === 義守大學 === 電子工程學系碩士班 === 99 === The study uses liquid phase oxidation (LPO) on the GaAs cap layer, and application to enhancement-mode (E-mode) InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) as a gate insulator. Instead of the traditional gate...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36588853812928622135 |