The Characteristic Analysis of RF Low Noise Amplifier
碩士 === 義守大學 === 電機工程學系碩士班 === 99 === In this paper, a low noise amplifier (LNA), operated at 1.92GHz-1.98GHz and used in WCDMA system, was designed and analyzed. The active device for the LNA was Heterojunction Biploar transistor (HBT) fabricated on GaAs substrate. First, the nonlinear model of the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47464071809994794993 |