The junction characteristic of the n-ZnO thin film to p-type semiconductor
碩士 === 崑山科技大學 === 光電工程研究所 === 99 === A study of n+-p junction by depositing n-ZnO (Ga doped) on p-Si was presented in the thesis. The electrical and material characteristics of the diode were discussed. The diode shows a best electrical characteristics after it was annealed at 600℃for 30 sec. The...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19076359515949656930 |