First-principles study of electric properties of ultra-thin HfO2/SiGe/Si film
碩士 === 國立高雄應用科技大學 === 電子工程系 === 99 === Strained Si1-xGex is of great interest as one of candidate channel material in complementary metal oxide semiconductor (CMOS) devices due to its high carrier mobility and the advantage of energy gap variation in band gap engineering associated with changing the...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73274309267190368144 |