The influence of surface states of valence-band Offset in Ultra-thin HfO2 Film on GaAs

碩士 === 國立高雄應用科技大學 === 電子工程系 === 99 === This paper presents the first-principles study of an ultra-thin (monoclinic-) cubic-HfO2 layer on GaAs substrate. The heavy stress in hafnia layer significantly causes the structure deformation and results in a charge transfer and superstoichiometric HfOy. Th...

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Bibliographic Details
Main Authors: CHIH-WEI HSU, 許智威
Other Authors: Kuan-Ming Hung
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/84451280056138189177