The influence of surface states of valence-band Offset in Ultra-thin HfO2 Film on GaAs
碩士 === 國立高雄應用科技大學 === 電子工程系 === 99 === This paper presents the first-principles study of an ultra-thin (monoclinic-) cubic-HfO2 layer on GaAs substrate. The heavy stress in hafnia layer significantly causes the structure deformation and results in a charge transfer and superstoichiometric HfOy. Th...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2011
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Online Access: | http://ndltd.ncl.edu.tw/handle/84451280056138189177 |