The study of crystallization kinetics and thermoelectric properties of Ge- and Si-based multilayers.
碩士 === 國立中興大學 === 材料科學與工程學系所 === 99 === In this study, Ge- and Si-based bilayers and multilayers were prepared by an ion beam assisted deposition system (IBAD). The crystallization behaviors were studied and the thermoelectric properties of multilayers were measured. The results of thermal analysis...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34993507750886974632 |