An AlN Sacrificial Buffer Layer Inserted into the InGaN Light Emitting Diode on Patterned Sapphire Substrate for a Chemical Lift-Off Process
碩士 === 國立中興大學 === 材料科學與工程學系所 === 99 === We use chemical lift-off technology to lift-off GaN epilayer grown on AlN sacrificial from two kinds of pattern sapphire. The first type is InGaN-based light-emitting diodes (LEDs) grown on triangle-shaped patterned sapphire substrates. After the epitaxial gro...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32248122513728487443 |