Characterization of InGaN-based photovoltaic by devices varying the Indium contents
碩士 === 國立中興大學 === 材料科學與工程學系所 === 99 === In this thesis, the analysis and measurements of the different characteristics of light-emitting diodes and photovoltaic properties with the same structure and size of InGaN photovoltaic devices were performed for the variation of indium content. For the forwa...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56502610143787380814 |