Diffusion Barrier Effect of Nickel and Cobalt Layers between Bismuth Telluride and Copper and Their Influence on Thermoelectric Properties

碩士 === 國立中興大學 === 材料科學與工程學系所 === 99 === In this study, Ni、Co diffusion barriers and Cu film were deposited onto Bi2Te3 bulk by RF magnetron sputter. The cross section of sample are Cu/Ni/Bi2Te3/Ni/Cu and Cu/Co/Bi2Te3/Co/Cu, respectively. Then Annealed at 200°C for 1、2、3、4、16 hours and 1、4、8、16 hours...

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Bibliographic Details
Main Authors: Shao-Yu Tseng, 曾紹瑜
Other Authors: 張立信
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/44569422096285933313