A Study for Effect of Strain on Semiconductor Materials and Devices
碩士 === 國立中興大學 === 電機工程學系所 === 99 === This paper was divided into three parts. With the simulation tool from Synopsys TCAD-Sentaurus Sband, part one studied impact of strain on electron mobility of NMOS with surface orientation of (001) and channel direction of [110]. With ANSYS simulation tool, part...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22018026714370233954 |