A Study for Effect of Strain on Semiconductor Materials and Devices

碩士 === 國立中興大學 === 電機工程學系所 === 99 === This paper was divided into three parts. With the simulation tool from Synopsys TCAD-Sentaurus Sband, part one studied impact of strain on electron mobility of NMOS with surface orientation of (001) and channel direction of [110]. With ANSYS simulation tool, part...

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Main Authors: Chia-Feng Li, 李佳峰
Other Authors: 張書通
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/22018026714370233954
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spelling ndltd-TW-099NCHU54410462017-10-29T04:34:09Z http://ndltd.ncl.edu.tw/handle/22018026714370233954 A Study for Effect of Strain on Semiconductor Materials and Devices 半導體材料與元件的應變效應研究 Chia-Feng Li 李佳峰 碩士 國立中興大學 電機工程學系所 99 This paper was divided into three parts. With the simulation tool from Synopsys TCAD-Sentaurus Sband, part one studied impact of strain on electron mobility of NMOS with surface orientation of (001) and channel direction of [110]. With ANSYS simulation tool, part two analyzed stress distribution of three type of TFT structure devices, namely bottom gate, double gate and top gate, considering the effects of mechanical bending, gate length Young’s modulus and intrinsic stress in materials. Part three investigated strain impact of geometry structure on electron mobility, InGaAs NMOS using stress simulation tool ANSYS and Kubo-Greenwood mobility formula. 張書通 2011 學位論文 ; thesis 65 zh-TW
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description 碩士 === 國立中興大學 === 電機工程學系所 === 99 === This paper was divided into three parts. With the simulation tool from Synopsys TCAD-Sentaurus Sband, part one studied impact of strain on electron mobility of NMOS with surface orientation of (001) and channel direction of [110]. With ANSYS simulation tool, part two analyzed stress distribution of three type of TFT structure devices, namely bottom gate, double gate and top gate, considering the effects of mechanical bending, gate length Young’s modulus and intrinsic stress in materials. Part three investigated strain impact of geometry structure on electron mobility, InGaAs NMOS using stress simulation tool ANSYS and Kubo-Greenwood mobility formula.
author2 張書通
author_facet 張書通
Chia-Feng Li
李佳峰
author Chia-Feng Li
李佳峰
spellingShingle Chia-Feng Li
李佳峰
A Study for Effect of Strain on Semiconductor Materials and Devices
author_sort Chia-Feng Li
title A Study for Effect of Strain on Semiconductor Materials and Devices
title_short A Study for Effect of Strain on Semiconductor Materials and Devices
title_full A Study for Effect of Strain on Semiconductor Materials and Devices
title_fullStr A Study for Effect of Strain on Semiconductor Materials and Devices
title_full_unstemmed A Study for Effect of Strain on Semiconductor Materials and Devices
title_sort study for effect of strain on semiconductor materials and devices
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/22018026714370233954
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