Nanoscale Gate Oxide Leakage Current under Mechanical Strain
碩士 === 國立暨南國際大學 === 電機工程學系 === 99 === This study mainly discusses the degradation and breakdown phenomenon of thin silicon dioxide gate layer at nanoscale by applying uniaxial mechanical stress. In the past, many studies have shown that the degradation behavior of thin silicon oxide layer is a h...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34213570924980268170 |