Photo-Response of Metal-Oxide-Semiconductor Capacitance with Atomic Layer Deposited High-K Dielectric as Gate Insulator
碩士 === 國立暨南國際大學 === 電機工程學系 === 99 === In this thesis, metal-oxide-semiconductor capacitors (MOSC) with high-k dielectric HfO2 deposited by atomic layer deposition (ALD) were fabricated, and indium tin oxide (ITO) prepared by sputtering was used as the gate metal material. By taking advantage of the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04069515428761367866 |