Photo-Response of Metal-Oxide-Semiconductor Capacitance with Atomic Layer Deposited High-K Dielectric as Gate Insulator
碩士 === 國立暨南國際大學 === 電機工程學系 === 99 === In this thesis, metal-oxide-semiconductor capacitors (MOSC) with high-k dielectric HfO2 deposited by atomic layer deposition (ALD) were fabricated, and indium tin oxide (ITO) prepared by sputtering was used as the gate metal material. By taking advantage of the...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2011
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Online Access: | http://ndltd.ncl.edu.tw/handle/04069515428761367866 |