Characteristics of Poly-Si Nanowire TFTs With Asymmetric Ω-Gate
碩士 === 國立交通大學 === 材料科學與工程學系奈米科技碩博士班 === 99 === In order to increase the gate control capacity on the channel, multi-gate structure has been extensively studied as the critical dimension of thin-film transistors (TFTs) is scaled down. Both gate-all-around (GAA) TFTs and TFT SONOS memory devices...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57313995967352113819 |