A Study of Wet Process for Preparing Thin-film Transistors Containing Indium-doped Zinc Oxide

碩士 === 國立交通大學 === 材料科學與工程學系 === 99 === This study employs the polyol process to prepare the indium-doped zinc oxide (IZO) thin films to serve as the active channel layer of thin-film transistor (TFT). By using diethylene glycol (DEG) as the solvent/chelating agent, zinc acetate salt and indium aceta...

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Bibliographic Details
Main Authors: Wang, Wen-Jyuan, 王玟娟
Other Authors: Hsieh, Tsung-Eong
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/17091311675898266747