Epitaxial Growth of AlGaN/GaN Heterostructure by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistor Applications
博士 === 國立交通大學 === 材料科學與工程學系 === 99 === AlGaN/GaN heterostructure for the high electron mobility transistor applications were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on the sapphire substrates. The effects of AlN buffer growth parameters on the defect structure on GaN film were first...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46131051372301340245 |