The Random Dopants and Random Traps Induced Threshold Voltage Variations in Strained CMOS Devices
碩士 === 國立交通大學 === 電子研究所 === 99 === For the CMOS device technology with gate length 90 nm and beyond, strained technique has been a successful technology to extend the Moore’s law with further device scaling. Recent studies have revealed that the most mature CMOS technology is by the use of different...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71042067945894561022 |