Characterization of Transparent Resistive Random Access Memory Devices Based on HfO2/Al2O3 Multi-layer Stacking as Resistive Switching Film
碩士 === 國立交通大學 === 電子研究所 === 99 === We first demonstrate the resistive switching characteristics of Transparent Resistive Random Access Memory Devices (TRRAM) with HfO2/Al2O3 multi-layer stacking via different ALD deposition cycles as resistive switching films for 9-cycle, 19-cycle and 38-cycle devic...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/83320351285372293764 |