Independently-Controlled-Gate FinFET Schmitt Trigger Sub-threshold SRAMs
碩士 === 國立交通大學 === 電子研究所 === 99 === In this paper, we propose three novel Independently-controlled-Gate Schmitt Trigger (IG_ST) FinFET SRAM cells for sub-threshold operation. The proposed IG_ST 8T SRAM cells utilize split-gate FinFET devices with the front-gate devices serving as the stacking devices...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90163774215253788579 |