NBTI/PBTI Degradation and Noise Margin Measurement Circuit of Nano-scale CMOS SRAM
碩士 === 國立交通大學 === 電子研究所 === 99 === Lifetime reliability is one of the key design factors for robust VLSI systems. Bias Temperature Instability, Hot Carrier Injection, and Time Dependent Dielectric Breakdown have become major concerns for performance and yield of nano-scale CMOS VLSI systems. Static...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51290356974988520234 |