3D Atomistic Simulation of Single Charge Induced Threshold Voltage Fluctuation on VLSI Devices
碩士 === 國立交通大學 === 電子研究所 === 99 === ISE-TCAD is used to discuss random telegraph noise (RTN) on different VLSI devices in this report. We abandon the old method of 2-Dimensional uniform doping in devices and introduce a concept of 3-Dimensional “ atomistic ” doping. We successfully simulated single...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28503336134709816771 |