Unipolar Switching Properties of ZrO2-based Resistive Memory with Double-layer Structure
碩士 === 國立交通大學 === 電子研究所 === 99 === Due to the development of electronic products, the larger capacity of memory is needed. Among all kinds of memories, the most promising volatile memory is resistive memory. Resistive memory has simple structure, fast operation speed, low power consumption, high cel...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73865091697896799058 |