The Researching Mechanism and Application of the Novel Material DyMn2O5 (DMO) in Resistive Random Access Memory
碩士 === 國立交通大學 === 電子研究所 === 99 === The resistive switching random access memories (RRAMs) possess some advantages of scalability, low power consumption, fast operating time and stable endurance. The RRAM with these advantages has high potential for next generation memory applications. The switching...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75917315777028059507 |